TK12E60W,S1VX

Toshiba Semiconductor and Storage

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TK12E60W,S1VX

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Package:

TO-220

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Description:

MOSFET N CH 600V 11.5A TO-220

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Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 600µA
Base Product Number	TK12E60
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
Power Dissipation (Max)	110W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)